unisonic technologies co., ltd ut3310 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2010 unisonic technologies co., ltd qw-r502-388.a p-channel enhancement mode power mosfet ? description the utc ut3310 is a p-channel enhancement mode power mosfet. the utc ut3310 uses advanced technology to provide customers with fast switch ing, low on-resistance and cost-effectiveness. the utc ut3310 is generally applied in low voltage and battery power applications. ? features * gate drive capability: 2.5v * simple drive requirement ? symbol d(2) g(1) s(3) ? ordering information pin assignment ordering number package 1 2 3 packing UT3310G-TN3-R to-252 g d s tape reel
ut3310 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-388.a ? absolute maximum ratings parameter symbol ratings unit drain to source voltage v dss -20 v gate to source voltage v gss 12 v continuous drain current (t a =25c, v gs =10v) i d -10 a pulsed drain current i dm -24 a total power dissipation (t a =25c) p d 25 w linear derating factor 0.01 w/c junction temperature t j 150 ambient operating temperature t opr -55 ~ +150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 110 c/w junction to case jc 5.0 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250a -20 v breakdown voltage temperature coefficient bv dss / t j reference to 25c, i d =-1ma -0.1 v/c drain-source leakage current i dss v ds =-20v,v gs =0v -1 a gate-source leakage current i gss v ds =0v ,v gs =12v 100 na on characteristics gate threshold voltage v gs(th) v ds = v gs , i d =-250a -0.5 v v gs =-4.5v, i d =-2.8a 150 m ? drain-source on-state resistance r ds(on) v gs =-2.5v, i d =-2.0a 250 m ? dynamic parameters input capacitance c iss 300 pf output capacitance c oss 180 pf reverse transfer capacitance c rss v ds =-6v,v gs =0v,f =1.0mhz 60 pf switching parameters total gate charge (note2) q g 6 nc gate-source charge q gs 1.5 nc gate-drain charge q gd v ds =-6v, v gs =-5v, i d =-2.8a 0.6 nc turn-on delay time (note2) t d(on) 25 ns turn-on rise time t r 60 ns turn-off delay time t d(off) 70 ns turn-off fall time t f v ds =-6v,v gs =-5v, i d =-1a r g =6 ? , r d =6 ? 60 ns source-drain diode ratings and characteristics continuous source current ( body diode ) i s v d =v g =0v , v s =-1.2v -10 a pulsed source current ( body diode ) i sm (note1) -24 a drain-source diode forward voltage v sd i s =-10a, v gs =0v (note2) -1.2 v notes:1. pulse width limited by safe operating area. 2. pulse width 300us , duty cycle 2%.
ut3310 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-388.a ? typical characteristics q gs q gd q g -5v v g q charge gate charge waveform d g s v ds v gs 0.3rated v ds to the oscilloscope gate charge circuit i g i d -1 -3ma ~ utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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